Minority Carrier Lifetime in Uniaxially Stressed Germanium
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1965-01-15
著者
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Miura Yoshio
Semiconductor Division Nippon Electric Co. Ltd.
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Matukura Yasuo
Semiconductor Division Nippon Electric Co. Ltd.
関連論文
- Effect of Orientation on Surface Charge Density at Silicon-Silicon Dioxide Interface
- Instabilities of MOS Structure
- Dislocations in Epitaxially Grown Silicon
- Anomalous Diffusion of Boron into Silicon Grain Boundary
- Anisotropic Stress Effect of Ge pn Junctions
- Minority Carrier Lifetime in Uniaxially Stressed Germanium
- Conductivity of Grain Boundaries in Ge
- Anisotropic Stress Effect of Si Transistors
- Uniaxial Stress Effect of Ge p-n Junctions
- Uniaxial Stress Effect on Ge Grown Junctions
- Some Factors Influencing on the Anisotropic Stress Effect of pn Junctions
- Investigation of Silicon-Silicon Dioxide Interface Using MOS Structure
- Uniaxial Stress Effect of Ge pn Junctions Doped with Copper
- Anisotropic Stress Effect of Silicon pn Junctions