Effect of Orientation on Surface Charge Density at Silicon-Silicon Dioxide Interface

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概要

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• The effect of the orientation of the silicon substrate on the surface charge density, N_<FB>, at the silicon-silicon dioxide interface is studied. Surface oxidation of silicon is carried out at 1140℃ in dry oxygen. The surface charge density is determined from the capacitance-voltage characteristics of the MOS diode. Measurements are made at 1 Mc/sec small singnal superposed on a dc bias. The orientation of silicon has a remarkable influence on N_<FB>, and its magnitude becomes smaller in the order of (111), (211), (110), and (100) planes. In the case of (100) silicon substrate, the depletion of electrons at the silicon-silicon dioxide interface is observed.

• 社団法人応用物理学会の論文
• 1965-12-15

著者

• Miura Yoshio

  Semiconductor Ic Division Nippon Electric Co. Ltd.

• Miura Yoshio

  Semiconductor Division Nippon Electric Company Ltd.

• Miura Yoshio

  Semiconductor Division Nippon Electric Co. Ltd.

関連論文

• Effect of Orientation on Surface Charge Density at Silicon-Silicon Dioxide Interface
• Instabilities of MOS Structure
• Dislocations in Epitaxially Grown Silicon
• Minority Carrier Lifetime in Uniaxially Stressed Germanium
• Investigation of Silicon-Silicon Dioxide Interface Using MOS Structure

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