Some Factors Influencing on the Anisotropic Stress Effect of pn Junctions
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概要
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The anisotropic stress effect in silicon and germanium pn junctions is studied for various values of factors, such as stress, junction depth from the surface, resistivity and dislocation density of bulk semiconductor, and temperature. On the basis of the empirical formula for this effect, the most important parameters, W_0 and J_0^*, are obtained from the dependence on the above mentioned factors. W_0 increases linearly with the increase of junction depth and slightly with the increase of resistivity, while it does not depend on the dislocation density. On the other hand, J_0^* does not depend on the junction depth, but it increases a little with decreasing impurity concentration and dislocation density. The contribution of stress to the effect changes stepwise during successive increase of the stress. The results are discussed in connection with the strain created of the stress. The results are discussed in connection with the strain created by stress and the recombination current due to the strain, but at the present stage it is difficult to explain the temperature dependence of the anisotropic stress effect.
- 社団法人応用物理学会の論文
- 1964-09-15
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