Uniaxial Stress Effect on Ge Grown Junctions
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概要
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Uniaxially compressive stress up to 10^<10> dynes/cm^2 is applied perpendicularly to the grown pn^+ or np^+ junction having <100>, <111>, <011>, or <112> plane. The saturation current ratio, I_s/I_<so>, where I_<so> is the saturation current under the stress-free condition, is measured as a function of the uniaxial stress at room temperature. The variations of I_s/I_<so> for both np^+ and pn^+ junctions with the applied stress are in qualitative agreement with the characteristics calculated from the changes in minority carrier concentration and its mobility, which are obtained by the shifts of L_1 and Γ_<25'> according to the direction of the uniaxial stress. Minority carrier lifetime is measured on rod specimens having specified orientations by photoconductive decay method as a function of the uniaxial stress. The variations of lifetime also have an appreciable contribution to I_s/I_<so>. However, there is a large discrepancy between the experimental and theoretical values of I_s/I_<so>, unless the shifts of L_1 and Γ_<25'> calculated by Wortman are modified.
- 社団法人応用物理学会の論文
- 1965-09-15
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