Anisotropic Stress Effect of Silicon pn Junctions

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概要

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• The effect of large anisotropic stress on shallow silicon pn junctions is investigated. Anisotropic stresses are applied perpendicularly to four types of junction planes, each having an orientation of (100), (110), (211) or (111). The current through the region stressed increases exponentially with the increasing stress, and its dependence on the applied voltage is similar to that of a normal pn junction. Current under the stressed condition is shown empirically as follows: I_s=(1-α)I+αAJ_<0^*>exp(W/W_0)[exp(qV/mkT)-1]. W_0 is the characteristic weight, which can be a measure of the sensitivity to the increased current. The characteristic weight is found to be minimum for the (100) pn junction and maximum for the (111). An influence of the spreading resistance on the current through the stressed region has been considered, and possible explanations of the anisotropic stress effect are given.

• 社団法人応用物理学会の論文
• 1964-05-15

著者

• Matukura Yasuo

  Semiconductor Division Nippon Electric Co. Ltd.

• MATUKURA Yasuo

  Semiconductor Division, Nippon Electric Co., Ltd.

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