Double-Layer Epitaxial Growth of Si and B_<13>P_2 on Si Substrates and Some Electrical Properties of Si Layers

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概要

• 論文の詳細を見る

• The Si(epi)-B_<13>P_2(epi)-Si(sub) structures are obtained by thermal reaction in a B_2H_6-PH_3-H_2 system and thermal decomposition in a SiH_4-H_2 system. Although the B_<13>P_2 layer exhibits four twinned crystals, the Si layer is a single crystal. The orientation relationship is Si(100)<011>//B_<13>P_2(101^^-1)[12^^-10]//Si(100)<011>. Without any additional doping an n-type Si layer is obtained at deposition temperatures between 930℃ and 1000℃; a p-type layer is obtained above 1000℃. The best n-type Si layer has an electron concentration of 3.6×10^<15> cm^<-3> with an electron mobility of 480 cm^2/V-sec at room temperature. The hole concentration in the p-type Si layer has almost the same value as the solid solubility of boron in Si.

• 社団法人応用物理学会の論文
• 1974-08-05

著者

• Takenaka Takao

  Department Of Electronics Sophia University

• SHOHNO Katsufusa

  Department of Electronics, Sophia University

• Shohno Katsufusa

  Department Of Electronics Sophia University

• TAKENAKA Takao

  Department of Electronics, Sophia University

関連論文

• Double-Layer Epitaxial Growth of Si and B_P_2 on Si Substrates and Some Electrical Properties of Si Layers
• Hardness of Boron Monophosphide
• Dielectric Constant and Refractive Index of Boron Monophosphide
• Boron Monophosphide and Some of Its Electrical Properties
• Hetero-Epitaxial Growth of Lower Boron Arsenide on Si Substrate Using AsH_3-B_2H_6-H_2 System
• Hetero-Epitaxial Growth of Boron Monophosphide on Silicon Substrate Using B_2H_6-PH_3-H_2 System
• Hetero-Epitaxial Growth of Lower Boron Phosphide on Silicon Substrate Using PH_3-B_2H_6-H_2 System

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