Hetero-Epitaxial Growth of Lower Boron Arsenide on Si Substrate Using AsH_3-B_2H_6-H_2 System

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1973-12-05

著者

• SHOHNO Katsufusa

  Department of Electronics, Sophia University

• Hirayama Makoto

  Department Of Electronics Sophia University

• Shohno Katsufusa

  Department Of Electronics Sophia University

関連論文

• Double-Layer Epitaxial Growth of Si and B_P_2 on Si Substrates and Some Electrical Properties of Si Layers
• Hardness of Boron Monophosphide
• Dielectric Constant and Refractive Index of Boron Monophosphide
• Boron Monophosphide and Some of Its Electrical Properties
• Hetero-Epitaxial Growth of Lower Boron Arsenide on Si Substrate Using AsH_3-B_2H_6-H_2 System
• Hetero-Epitaxial Growth of Boron Monophosphide on Silicon Substrate Using B_2H_6-PH_3-H_2 System
• Hetero-Epitaxial Growth of Lower Boron Phosphide on Silicon Substrate Using PH_3-B_2H_6-H_2 System

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