Hetero-Epitaxial Growth of Lower Boron Phosphide on Silicon Substrate Using PH_3-B_2H_6-H_2 System

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概要

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• Single crystal of lower boron phosphide (B_<13>P_2) with hexagonal structure was obtained hetero-epitaxially on silicon substrate. Diborane (B_2H_6) and phosphine (PH_3) diluted in hydrogen were used as reactant gases. The substrate temperatures were between 1050℃ and 1250℃ and the molecular ratio of reactants to carrier hydrogen was below 3.2×10^<-4>. The epitaxial relations were: B_<13>P_2(112^^-0)/Si(100), B_<13>P_2(112^^-0)/Si(110) and B_<13>P_2(101^^-0)/Si(111). The lower boron phosphide was a transparent film and its resistivity was measured as 1×10^8 Ω-cm at room temperature.

• 社団法人応用物理学会の論文
• 1973-10-05

著者

• SHOHNO Katsufusa

  Department of Electronics, Sophia University

• TAKIGAWA Mitsuharu

  Department of Electronics, Sophia University

• Hirayama Makoto

  Department Of Electronics Sophia University

• Shohno Katsufusa

  Department Of Electronics Sophia University

• Takigawa Mitsuharu

  Department Of Electronics Sophia University

関連論文

• Double-Layer Epitaxial Growth of Si and B_P_2 on Si Substrates and Some Electrical Properties of Si Layers
• Hardness of Boron Monophosphide
• Dielectric Constant and Refractive Index of Boron Monophosphide
• Boron Monophosphide and Some of Its Electrical Properties
• Hetero-Epitaxial Growth of Lower Boron Arsenide on Si Substrate Using AsH_3-B_2H_6-H_2 System
• Hetero-Epitaxial Growth of Boron Monophosphide on Silicon Substrate Using B_2H_6-PH_3-H_2 System
• Hetero-Epitaxial Growth of Lower Boron Phosphide on Silicon Substrate Using PH_3-B_2H_6-H_2 System

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