Hetero-Epitaxial Growth of Boron Monophosphide on Silicon Substrate Using B_2H_6-PH_3-H_2 System

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概要

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• Boron monophosphide (BP) was epitaxially grown on Si substrates with (100), (110) and (111) faces, by thermal decomposition of a B_2H_6-PH_3 mixture in hydrogen in the temperature range of 950℃ to 1050℃. The crystallographic orientation of the BP was the same as that of the Si substrates. n- and p-type BP were obtained under different growth conditions. The carrier concentrations without any additional doping were from 10^<18> to 10^<21> cm^<-3> and their mobilities were from 150 to 80 cm^2/Vsec.

• 社団法人応用物理学会の論文
• 1974-03-05

著者

• SHOHNO Katsufusa

  Department of Electronics, Sophia University

• TAKIGAWA Mitsuharu

  Department of Electronics, Sophia University

• Hirayama Makoto

  Department Of Electronics Sophia University

• Shohno Katsufusa

  Department Of Electronics Sophia University

• Takigawa Mitsuharu

  Department Of Electronics Sophia University

関連論文

• Double-Layer Epitaxial Growth of Si and B_P_2 on Si Substrates and Some Electrical Properties of Si Layers
• Hardness of Boron Monophosphide
• Dielectric Constant and Refractive Index of Boron Monophosphide
• Boron Monophosphide and Some of Its Electrical Properties
• Hetero-Epitaxial Growth of Lower Boron Arsenide on Si Substrate Using AsH_3-B_2H_6-H_2 System
• Hetero-Epitaxial Growth of Boron Monophosphide on Silicon Substrate Using B_2H_6-PH_3-H_2 System
• Hetero-Epitaxial Growth of Lower Boron Phosphide on Silicon Substrate Using PH_3-B_2H_6-H_2 System

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