Metal Ion Source for Ion Implantation System

概要

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An ion source which produces ion beams of gases or solids has been developed for ion implantation system. The source is a oven-ionizer type, and the vapor pressure of 10^<-3>-10^<-2> Torr required for stable operation is obtained by heating the charge material to a sufficient high temperature. A unique feature of this source is that the arc discharge formed in the source is constricted both geometrically and magnetically, thus allowing to obtain large ion current, high brightness and small spot size. The source was constructed in a testing system with a magnetic mass separator, and beams of Ar^+, He^+, N^+, Zn^+, Ag^+, Al^+, Au^+ and B^+ ions have been obtained stably during long period. The maximum ion current extracted from the source through 0.7 mm diameter outlet is more than 1 mA except when operated on pure boron, and the normalized brightness when operated on Ar is about 1.4×10^<11> A/cm^2・strad.
社団法人応用物理学会の論文
1972-08-05