Purification of Bismuth by the Floating Zone Refining
スポンサーリンク
概要
- 論文の詳細を見る
In order to obtain extreme pure bismuth, the floating zone refining method is adopted in addition to the ordinary horizontal zone refining. Thereafter, single crystals of the desired orientations are grown by using seed crystals. The value of residual resistance ratio R_<293゜K>/R_<4.2゜K> which is measured along the binary axis is obtained as 738 at the largest. This is the highest value of purity when compared to the other published values.
- 社団法人応用物理学会の論文
- 1971-09-05
著者
-
Otake Shuichi
Department Of Physics Faculty Of Science Science University Of Tokyo
-
Matsuno Naoshi
Department Of Physics Faculty Of Science Science University Of Tokyo
関連論文
- Gauge Invariance and the Meissner Effect
- Dark and Light Pits in Bismuth Crystals
- Dislocation Etch Pits on Various Crystal Planes with Higher Order Indices of Bismuth
- Anomalous Longitudinal Magnetoresistance of Bismuth
- Migration Energy of Vacancies in Bismuth
- Supercooled Structure of Bismuth
- Anomalous Electrical Resistivity at High Temperatures in Bismuth
- Critical Resolved Shear Stresses of Two Slip Systems in Bismuth Single Crystals
- Purification of Bismuth by the Floating Zone Refining
- Temperature Dependence of the Magnetic Susceptibility of Bismuth
- Measurements of Equilibrium Vacancy Concentration in Bismuth
- Temperature Dependence of the Magnetic Susceptibility of Bismuth. II. Vacancy Effect
- Effect of Temperature Gradient Annealing on Bismuth Single Crystal