Critical Resolved Shear Stresses of Two Slip Systems in Bismuth Single Crystals
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概要
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The temperature and strain rate dependences of the critical resolved shear stress of bismuth single crystal are investigated by compression tests for two slip systems, (111) 11^^-0 and {001} <11>^^^-0, over the temperature range from 77 K to 538 K. From the results the activation energy U_o and the activation volume of dislocation motion for each slip system are determined. They are 0.1 eV and 2×10^<-19>cm^3 for the (111) 11^^-0 slip system, 0.4 eV and 0.06×10^<-19>cm^3 for the {001} <11>^^^-0 slip system, respectively. It is concluded that for the (111) 11^^-0 slip system the main obstacle to moving dislocations is the forest dislocation, and for the {001} <11>^^^-0 slip system the Peierls potential controls the slip mechanism.
- 社団法人応用物理学会の論文
- 1980-03-05
著者
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Matsuno Naoshi
Department Of Physics Faculty Of Science Science University Of Tokyo
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Otake Schuichi
Department Of Physics Faculty Of Science Science University Of Tokyo
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NAMAZUE Hiroko
Department of Physics, Faculty of Science, Science University of Tokyo
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Namazue Hiroko
Department Of Physics Faculty Of Science Science University Of Tokyo
関連論文
- Supercooled Structure of Bismuth
- Anomalous Electrical Resistivity at High Temperatures in Bismuth
- Critical Resolved Shear Stresses of Two Slip Systems in Bismuth Single Crystals
- Purification of Bismuth by the Floating Zone Refining
- Temperature Dependence of the Magnetic Susceptibility of Bismuth
- Measurements of Equilibrium Vacancy Concentration in Bismuth
- Temperature Dependence of the Magnetic Susceptibility of Bismuth. II. Vacancy Effect
- Effect of Temperature Gradient Annealing on Bismuth Single Crystal