Migration Energy of Vacancies in Bismuth
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概要
- 論文の詳細を見る
Annealing studies on quenched bismuth have been carried out using electrical resistivity measurements in the temperature range from 77 K to 380 K. A recovery stage is observed between 230 K and 310 K. This stage must be caused by annihilation of vacancies. The migration energy of a vacancy, 0.30eV, is determined by the slope change method in this stage. The acti-vation energy of self-diffusion is estimated using a similar formula for typical metals and is found to be 0.66 eV (15.2 kcal/mol). The ratio between the activation energy of self-diffusion and the melting temperature is 27.9 cat/mol. This value is slightly lower than that for typical metals.
- 社団法人応用物理学会の論文
- 1981-06-05
著者
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Ishii Yoshinobu
Department Of Physics Faculty Of Science Science University Of Tokyo
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OTAKE Shuichi
Department of Physics, Tokyo Science College
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Otake Shuichi
Department Of Physics Faculty Of Science Science University Of Tokyo
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MATUNO Naoshi
Department of Physics, Faculty of Science, Science University of Tokyo
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Matuno Naoshi
Department Of Physics Faculty Of Science Science University Of Tokyo
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OTAKE Shuichi
Department of Physics, Faculty of Science, Science University of Tokyo
関連論文
- Gauge Invariance and the Meissner Effect
- Dark and Light Pits in Bismuth Crystals
- Dislocation Etch Pits on Various Crystal Planes with Higher Order Indices of Bismuth
- Anomalous Longitudinal Magnetoresistance of Bismuth
- Migration Energy of Vacancies in Bismuth
- Supercooled Structure of Bismuth
- Anomalous Electrical Resistivity at High Temperatures in Bismuth
- Purification of Bismuth by the Floating Zone Refining
- Temperature Dependence of the Magnetic Susceptibility of Bismuth
- Temperature Dependence of the Magnetic Susceptibility of Bismuth. II. Vacancy Effect
- Effect of Temperature Gradient Annealing on Bismuth Single Crystal