アモルファス・シリコン薄膜トランジスタのオフ状態におけるダイナミック特性

概要

論文の詳細を見る
Dynamic measurements on leakage current of an amorphous silicon thin film transistor (TFT) under gate side illumination have been achieved. The samples used in the experiment were inverted staggered type amorphous silicon TFTs. The measured dynamic leakage current was different from that obtained by static measurement. The off current flowed with the delay time for up to 10 msec after the channel turned off-state and reached saturation. Rise time, which was the increasing point of off leakage current, depended on gate pulse width of on state, illumination intensity, and gate voltage level of off state. the rise time was larger than frame time of TFT-LCD. Therefore, the actual off leakage current of TFT under LCD operation is lower than that for static characteristics.
社団法人映像情報メディア学会の論文
1991-11-01