Growth of Large Area ZnS Thin Films on ITO/Glass Substrates by Low-Pressure Metalorganic Chemical Vapor Deposition : OTHER DISPLAY
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概要
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The dependences of crystallinity on growth conditions of the ZnS thin films deposited on the ITO/glass substrate by low-pressure MOCVD system have been studied. The high-quality ZnS thin films with strongly preferred orientation can be grown under the optimum condition : the substrate temperature, the reactor pressure and [H_2S]/[DMZn] molar ratio are 225 ℃, 30 Torr and 20, respectively. The Δ2θ value can be reduced below 0.175°. The atomic ratio of S/Zn and the lattice constant obtained are 0.96 and 5.418 A, respectively. Furthermore, the large-area, 130*190 mm^2 ZnS thin films are grown by optimum conditions. The uniformities in film thickness and crystallinity have been measured. Although less than 10% variation in the thickness and FWHM values have been got, the variation must be further improved in the future.
- 一般社団法人映像情報メディア学会の論文
- 1993-10-28
著者
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YOKOYAMA M.
Department of Anstomy, Shimane Medical University Department of Molecular Life Science II, School of
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Chiang J.d.
Department Of Electrical Engineering National Cheng Kung University
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SU Y.K.
Department of Electrical Engineering, National Cheng Kung University
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Su Y.k.
Department Of Electrical Engineering National Cheng Kung University
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Li J.W.
Department of Electrical Engineering, National Cheng Kung University
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Li J.w.
Department Of Electrical Engineering National Cheng Kung University
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