Latest progress in the MOVPE growth of indium nitride(InN) film (小特集テーマ 進展する窒化物半導体光・電子デバイスの現状)
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概要
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During the last few years the interest in the indium nitride (InN) has been remarkable. A remarkable improvement in the growth of InN film has been revealed. Good quality single crystalline InN film with 2D growth and high growth rate can easily be obtained now. The background carrier concentration and Hall mobility are also remarkably improved. Observation of strong photoluminescence is also reported very recently, with exciting confliction about the exact band gap of InN. In this article, the current progress in the MOVPE growth of InN will be discussed. It mainly concentrates in the progress of InN film obtained in our laboratory. Which includes, growth in a variety of condition and technique, growth on different substrates, influence of reactor design, etc.
- 社団法人電子情報通信学会の論文
- 2002-06-06
著者
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YAMAMOTO Akio
Department of Applied Chemistry, Graduate School of Science and Engineering, Waseda University
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Bhuiyan A
Fukui Univ. Fukui Jpn
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Hashimoto A
Department Of Electrical & Electronics Engineering Fukui University
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Hashimoto A
Graduate School Of Engineering Science Osaka University
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BHUIYAN Ashraful
Department of Electrical & Electronics Engineering, Fukui University
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HASHIMOTO Akihiro
Department of Electrical & Electronics Engineering, Fukui University
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Hashimoto Akihiro
Faculty Of Engineering Fukui University
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Hashimoto A
Univ. Tsukuba
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Yamamoto Akio
Faculty Of Engineering Fukui University
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Yamamoto Akio
Department Of Applied Chemistry Graduate School Of Science And Engineering And Advanced Research Cen
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