Growth of Hexagonal GaN on Si(111) by Using a porous GaN Interlayer (小特集テーマ 進展する窒化物半導体光・電子デバイスの現状)
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概要
- 論文の詳細を見る
In this paper we propose a new interlayer for the GaN epitaxial growth on Si to minimize residual stress in the grown film. High quality GaN epilayer was grown successfully on Si by using porous GaN interlayer converted from GaAs.
- 社団法人電子情報通信学会の論文
- 2002-06-06
著者
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Hashimoto A
Department Of Electrical & Electronics Engineering Fukui University
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Hashimoto A
Graduate School Of Engineering Science Osaka University
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Ghosh Bablu
Faculty Of Engineering Fukui University
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Ito Yoshifumi
Wakasa-wan Energy Research Center
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TANIKAWA Toru
Faculty of engineering, Fukui University
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HASHIMOTO Akihiro
Faculty of engineering, Fukui University
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YAMAMOTO Akio
Faculty of engineering, Fukui University
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Tanikawa Toru
Faculty Of Engineering Fukui University
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Hashimoto Akihiro
Faculty Of Engineering Fukui University
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Hashimoto A
Univ. Tsukuba
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Yamamoto Akio
Faculty Of Engineering Fukui University
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