HASHIMOTO Akihiro | Faculty of engineering, Fukui University
スポンサーリンク
概要
関連著者
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Hashimoto A
Department Of Electrical & Electronics Engineering Fukui University
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Hashimoto A
Graduate School Of Engineering Science Osaka University
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Ghosh Bablu
Faculty Of Engineering Fukui University
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Ito Yoshifumi
Wakasa-wan Energy Research Center
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TANIKAWA Toru
Faculty of engineering, Fukui University
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HASHIMOTO Akihiro
Faculty of engineering, Fukui University
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YAMAMOTO Akio
Faculty of engineering, Fukui University
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Tanikawa Toru
Faculty Of Engineering Fukui University
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Hashimoto Akihiro
Faculty Of Engineering Fukui University
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Hashimoto A
Univ. Tsukuba
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Yamamoto Akio
Faculty Of Engineering Fukui University
著作論文
- Growth of Hexagonal GaN on Si(111) by Using a porous GaN Interlayer (小特集テーマ 進展する窒化物半導体光・電子デバイスの現状)
- Growth of Hexagonal GaN on Si(111) by Using a porous GaN Interlayer (小特集テーマ:進展する窒化物半導体光・電子デバイスの現状)