Mesh Generation for Application in Technology CAD (Special Issue on TCAD for Semiconductor Industries)

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概要

• 論文の詳細を見る

• After a brief discussion of the demands in meshing for semiconductor process and device simulation, we present a three-dimensional Delaunay refinement technique combined with a modified advancing front algorithm

• 社団法人電子情報通信学会の論文
• 1999-06-25

著者

• Fleischmann Peter

  The Institute For Microelectronics Technische Universistat Wien

• Selberherr Siegfried

  The Institute For Microelectronics Technische Universistat Wien

• Selberherr Siegfried

  The Institute For Microelectronics Technical Univercity Of Vienna

• PYKA Wolfgang

  the Institute for Microelectronics, Technische Universistat Wien

• Pyka Wolfgang

  The Institute For Microelectronics Technische Universistat Wien

• Selberherr Siegfried

  the Institute for Microelectronics

関連論文

• Mesh Generation for Application in Technology CAD (Special Issue on TCAD for Semiconductor Industries)
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• Practical Inverse Modeling with SIESTA (Special lssue on SISPAD'99)
• A Monte-Carlo Method to Analyze the Small Signal Response of the Semiconductor Carriers (Special lssue on SISPAD'99)
• Monte Carlo Simulation of lon Implantation for Three-Dimensional Structures Using an Octree (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))
• Electrothermal Analysis of Latch-Up in an Insulated Gate Transistor (IGT) (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))

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