A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation (Special lssue on SISPAD'99)
スポンサーリンク
概要
- 論文の詳細を見る
The high accuracy which is necessary for modern process simulation often requires the use of Monte-Carlo ion implantation simulation methods with the disadvantage of very long simulation times especially for three-dimensional applications. In this work a new method for an accurate and CPU time efficient three-dimensional simulation of ion implantation is suggested. The approach is based on a combination of the algorithmic capabilities of a fast analytical and the Monte-Carlo simulation method.
- 社団法人電子情報通信学会の論文
- 2000-08-25
著者
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RYSSEL Heiner
Fraunhofer Institut fuer Integrierte Schaltungen
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Lorenz J
The Fraunhofer Institut Fur Integrierte Schaltungen Bauelementetechologie
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Ryssel Heiner
The Fraunhofer Institut Fur Integrierte Schaltungen Bauelementetechologie
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Selberherr Siegfried
The Institute For Microelectronics Technical Univercity Of Vienna
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Selberherr Siegfried
The Institute For Microelectronics Tu Vienna
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Lorenz Jurgen
The Fraunhofer Institut Fur Integrierte Schaltungen Bauelementetechnologie
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Burenkov Alexander
the Fraunhofer Institut fur Integrierte Schaltungen, Bauelementetechologie
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Tietzel Klaus
the Fraunhofer Institut fur Integrierte Schaltungen, Bauelementetechologie
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Hossinger Andreas
the Institute for Microelectronics, TU Vienna
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Tietzel Klaus
The Fraunhofer Institut Fur Integrierte Schaltungen Bauelementetechologie
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Hossinger Andreas
The Institute For Microelectronics Tu Vienna
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Burenkov Alexander
The Fraunhofer Institut Fur Integrierte Schaltungen Bauelementetechologie
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Ryssel Heiner
the Fraunhofer Institut fur Integrierte Schaltungen , Bauelementetechologie
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Selberherr Siegfried
the Institute for Microelectronics
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- Mesh Generation for Application in Technology CAD (Special Issue on TCAD for Semiconductor Industries)
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- Evaluation of the Point Defect Bulk Recombination Rate by Ion Implantation at High Temperatures
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- Transmission-Electron-Microscopy Observation of Pt Pillar Fabricated by Electron-Beam-Induced Deposition
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