Monte Carlo Simulation of lon Implantation for Three-Dimensional Structures Using an Octree (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))

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概要

• 論文の詳細を見る

• A fully three-dimensional simulation tool for modeling the ion implantation in arbitrarily complex three-dimensional structures is described. The calculation is based on the Monte Carlo (MC) method. For MC simulations of realistic three-dimensional structures the key problem is the CPU-time consumption which is primarily caused by two facts. (1) A large number of ion trajectories (about 10^7) has to be simulated to get results with reasonable low statistical noise. (2) The point location problem is very complex in the three-dimensional space. Solutions for these problems are given in this paper. To reduce the CPU-time for calculating the numerous ion trajectories a superposition method is applied. For the point location (geometry checks) different possibilities are presented. Advantages and disadvantages of the conventional intersection method and a newly introduced octree method are discussed. The octree method was found to be suited best for three-dimensional simulation. Using the octree the CPU-time required for the simulation of one ion trajectory could be reduced so that it only needs approximately the same time as the intersection method in the two-dimensional case. Additionally, the data structure of the octree simplifies the coupling of this simulation tool with topography simulators based on a cellular method. Simulation results for a three-dimensional trench structure are presented.

• 一般社団法人電子情報通信学会の論文
• 1994-02-25

著者

• Selberherr Siegfried

  The Institute For Microelectronics Technical University Of Vienna

• Selberherr Siegfried

  The Institute For Microelectronics Technical Univercity Of Vienna

• Stippel Hannes

  the Institute for Microelectronics, Technical University of Vienna

• Stippel Hannes

  The Institute For Microelectronics Technical University Of Vienna

• Selberherr Siegfried

  the Institute for Microelectronics

関連論文

• Mesh Generation for Application in Technology CAD (Special Issue on TCAD for Semiconductor Industries)
• A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation (Special lssue on SISPAD'99)
• Accurate Simulation of Pattern Transfer Processes Using Minkowski Operations (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))
• Practical Inverse Modeling with SIESTA (Special lssue on SISPAD'99)
• A Monte-Carlo Method to Analyze the Small Signal Response of the Semiconductor Carriers (Special lssue on SISPAD'99)
• Monte Carlo Simulation of lon Implantation for Three-Dimensional Structures Using an Octree (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))
• Electrothermal Analysis of Latch-Up in an Insulated Gate Transistor (IGT) (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))

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