Accurate Simulation of Pattern Transfer Processes Using Minkowski Operations (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))

概要

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A new method for simulation of etching and deposition processes has been developed. This method is based on fundamental morphological operations derived from image and signal processing. As the material surface during simulation moves in time, the geometry either increases or decreases. If the simulation geometry is considered as a two-valued image (material or vacuum), etching and deposition processes can be simulated by means of the erosion and dilation operation. Together with a cellular material representation this method allows an accurate and stable simulation of three-dimensional arbitrary structures. Simulation results for several etching and deposition problems demonstrate accuracy and generality of our method.
社団法人電子情報通信学会の論文
1994-02-25