Electrothermal Analysis of Latch-Up in an Insulated Gate Transistor (IGT) (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))
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概要
- 論文の詳細を見る
An advanced model for self-heating effects in power semiconductor devices is derived from principles of irreversible thermodynamics. The importance of the entropy balance equation is emphasized. The governing equations for the coupled transport of charge carriers and heat are valid in both the stationary and transient regimes. Four characteristic effects contributing to the heat generation can be identified: Joule heating, recombination heating, Thomson heating and carrier source heating. Bandgap narrowing effects are included. Hot carrier effects are neglected. Numerical methods to solve the governing equations for the coupled transport of charge carriers and heat are described. Finally, results obtained in simulating latch-up in an IGT are discussed.
- 一般社団法人電子情報通信学会の論文
- 1994-02-25
著者
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Selberherr Siegfried
The Institute For Microelectronics Technical Univercity Of Vienna
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Brand Hermann
The Institute For Microelectronics Technical University Of Vienna
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