An Analysis of and a Method of Enhancing the Intensity of OBIRCH Signal for Defects Observation in VLSI Metal Interconnections (Special Issue on LSI Failure Analysis)

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概要

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• The origin of and a method of enhancing the Optical Beam Induced Resistance Change (OBIRCH) signal for defect observation in VLSI metal interconnections is discussed based on a numerical analysis of three-dimensional thermal conduction and experimental results. The numerical analysis shows that the OBIRCH signal originates from a slight increase in the resistance of the metal line caused by laser beam heating and that its effect is influenced by the temperature of the metal layer. Both simulations and experimental results suggest that cooling the sample is preferable to detect the OBIRCH signal. The decrease in the total resistance of the metal line without any change in the amount of the resistance increase under laser illumination is found to be the main cause of the OBIRCH signal enhancement under low temperature measurement.

• 社団法人電子情報通信学会の論文
• 1994-04-25

著者

• Sakai Tomoaki

  Ntt Lsi Laboratories

• Kawamura Naoki

  Ntt Lsi Laboratories

• Shimaya Masakazu

  Ntt Lsi Laboratories

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• Impact of Negative-Bias Temperature Instability on the Lifetime of Single-Gate CMOS Structures with Ultrathin (4–6 nm) Gate Oxides
• Impact of Negative-Bias Temperature Instability on the Lifetime of Single-Gate CMOS Structures with Ultrathin(4-6nm)Gate Oxides
• An Analysis of and a Method of Enhancing the Intensity of OBIRCH Signal for Defects Observation in VLSI Metal Interconnections (Special Issue on LSI Failure Analysis)

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