MNOS Nonvolatile Semiconductor Memory Technology : Present and Future(Special Issue on Nonvolatile Memories)

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概要

• 論文の詳細を見る

• We have manufactured large-scaled highly reliable MNOS EEPROMs over the last twenty years. In particular, at the present time, the smart-card microcontroller incorporating an embedded 32-kB MNOS EEPROM is rapidly expanding the markets for mobile applications. It might be said that we have established the conventional MNOS nonvolatile semiconductor memory technology. This paper describes the device design concepts of the MNOS memory, which include the optimization and control of the tunnel oxide film thickness(1.8nm), and the scaling guideline that considers the charge distribution in the trapping nitride film. We have developed a high-performance MONOS structure and have not found any failure due to the MONOS devices in high-density EEPROM products during 10-year data retention tests after 10^5 erase/write cycles. The future development of this highly reliable MNOS-type memory will be focussed on the high-density cell structure and high-speed programming method. Recently, some promising ideas for utilizing an MNOS-type memory device, such as 1-Tr/bit cell for byte-erasable full-featured EEPROMs and 2-bit/Tr cell for flash EEPROMs have been proposed. We are convinced that MNOS technology will advance into the area of nonvolatile semiconductor memories because of its high reliability and high yield of products.

• 社団法人電子情報通信学会の論文
• 2001-06-01

著者

• KAMIGAKI Yoshiaki

  Central Research Laboratory, Hitachi, Ltd.

• Minami Shin'ichi

  Semiconductor & Integrated Circuits Hitachi Ltd. C

• Kamigaki Yoshiaki

  Central Research Laboratory Hitachi Ltd.

関連論文

• A 3 Volt 1 Mbit Full-Featured EEPROM Using a Highly-Reliable MONOS Device Technology (Special Section on High Speed and High Density Multi Functional LSI Memories)
• Defect Termination by Nitrogen Bonding due to NO Nitridation in MOS Structures
• MNOS Nonvolatile Semiconductor Memory Technology : Present and Future(Special Issue on Nonvolatile Memories)
• Improvement of Written-State Retentivity by Scaling Down MNOS Memory Devices : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)

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