1200 Dots-Per-Inch Light Emitting Diode Array Fabricated by Solid-Phase Zinc Diffusion

概要

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We developed a 1200 dots-per-inch light emitting diode array (1200 dpi LED array) chip using a GaAs_lt0.8gt P_lt0.2gt epitaxial substrate for the first time. One LED array chip consists of 256 LEDs. In general, LED arrays are fabricated by vapor-phase zinc diffusion. From the viewpoint that shallow junctions should be formed to fabricate a very high-density LED array, solid-phase diffusion seems to be more suitable. We fabricated the LED array using selectively-masked solid-phase zinc diffusion, and the diffusion depth was controlled at 1μm. The diffusion depth was uniform under the diffusion window. The ratio of the length of lateral diffusion to the diffusion depth was about 1.7. These features imply that Zn diffusion was well controlled. In the Zn diffusion, the carrier concentration in the Zn diffusion region was high enough and the sheet resistance of the diffusion region with a diffusion depth of 1μm was low enough to obtain a sufficient level of emitted light power. The results of performance tests showed that the characteristics of the LED array chip are satisfactory for application in optical printer print heads, because of the array's highly-resolved near-field pattern characteristic, ample emitted light power, low emitted-light-power deviation, and long life.
社団法人電子情報通信学会の論文
1997-03-25