A Novel Effective-Channel-Length/External-Resistance Extraction Method for Small-Geometry MOSFET's
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概要
- 論文の詳細を見る
A novel effective channel length extraction method has been developed, which utilizes the difference between the local threshold voltage of channel region and that of external region. In this method, the dependence of external resistance on V_g is taken into account, and it is not necessary to extract V_<th>. It is found that the external resistance can be approximated as the linear function of V_g with V_g around V_<th>. For a 0.4μm gate length LDD MOSFET, the accuracy and resolution are estimated to be less than 0.02μm and 0.003μm, respectively.
- 社団法人電子情報通信学会の論文
- 1994-12-25
著者
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Saitoh M
The Department Of Electronic Engineering The University Of Tokyo
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MIKOSHIBA Nobuo
Hewlett Packard Laboratories
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Mikoshiba Nobuo
Hewlett-packard Laboratories Japan
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Yi You-wen
Hewlett-packard Laboratories Japan
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Yagi Takaaki
Hewlett-Packard Laboratories Japan
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Saitoh Mitsuchika
Hewlett-Packard Laboratories Japan
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