A Numerical Simulation on Stress-Induced Failure in Aluminum Conductors of a Microelectronic Package based on Surface and Grain Boundary Diffusion

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The stress-induced failure in an aluminum conductor of a microelectronic package was investigated in terms of diffusion along the surface and grain boundary. The mechanism of grooving, which initiated and grew at elevated temperature along a grain boundary perpendicular to the stress, was proposed and the failure process was numerically simulated. The grooving process was found to be sensitive to thermal stress as well as diffusion ratio, F = (grain boundary diffusion) / (surface diffusion). The active grain boundary diffusion brought about a crack-like groove at the high magnitudes of F and/or stress, whereas the low magnitudes led to a V-shaped groove and marked thinning of the conductor.
一般社団法人日本機械学会の論文
1993-04-15