強磁性多重トンネル接合単電子トランジスタ

概要

論文の詳細を見る
Tunnel magnetoresistance (TMR), which is based on the tunneling of spin-polarized electrons though ferromagnetic tunnel junctions, has recently attracted much attention for application to magnetoresistive nanostructure devices. In the present paper, we discuss the transport properties of the electron in single-electron transistors with ferromagnetic multiple tunnel junctions, considering the macroscopic quantum tunneling of charge (q-MQT). By assuming Ni/NiO/Ni ferromagnetic tunnel junction systems, we found that the TMR is clearly enhanced in the Coulomb blockade regime and is increased from 23% to 52% with an increase of the junction number N from 2 to 4. This is attributable to the fact that the tunneling rate of the Nth-order inelastic q-MQT is inversely proportional to the tunnel resistance to the Nth power. This result implies that TMR is controlled by gate and drain voltages and becomes larger when ferromagnetic materials with larger spin polarization are used.
社団法人日本磁気学会の論文
2001-04-15