X線測定によるシリコンエピタキシャル層の格子歪み(<特集>Growth and Characterization of Silicon Crystals)

概要

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Lattice strain of dislocation-free epitaxial silicon crystal doped with phosphor (4.5×10^1fcm^<-3>) was measured by X-ray double crystal diffraction. In a middle part of this crystal, where stress is balanced because of the symmetry of crystal shape, strain of the direction perpendicular to the deposited plane (111) is larger in thinner epitaxial layer. On the contrary, strain (expansion) of the direction in this plane is nearly equal to each other and substrate crystal without depending on thickness of deposited layer. These lattice expansion are contradictory to Poisson rule, but can be explained by supposing an anisotropic distortion angle between lattice plane of substrate and epitaxial crystal. These angles are not necessarily related to bending radius of the crystal, but depend thickness of epitaxial layer, and are estimated to be an order of 10^<-3> degree of arc from the relative lattice constant in epitaxial layer, d^e_<333>, d^e_<422>, d^e_<511>. Against this middle part, in an edge part of this crystal, lattice is considered to be hardly strained becuse of the asymmetry of crystal shape.
日本結晶成長学会の論文
1977-06-25