複結晶配置による単結晶の完全性の評価(<特集>Growth and Characterization of Silicon Crystals)

概要

論文の詳細を見る
For the characterization of single crystals, X-ray diffraction technique has widely been used. To meet the requirement to obtain accurate and detailed information about crystal defects or imperfections, it is important to controll the angular and wavelength spreads of the X-ray beam according to objectives of the study. For this purpose the multiple crystal arrangement has fruitfully been utilized. Firstly, the principle of the multiple crystal arrangement is explained using DuMond diagram which shows the angular and wavelength spreads of the X-ray beam diffracted by crystals, and next its topographic and goniometric applications are discussed. In topography, where the diffracted X-ray beam is recorded on a photographic plate or by TV system as a function of position in the crystal, some applications using collimated X-ray beam obtained by plane crystals as well as monochromatic divergent beam obtained by curved crystal are given. Special emphasis is put on the plane wave topographic study of silicon. In goniometry, where the intensity is measured as a function of angular position of the crystal, various characteristics of rocking curve available for characterization of crystals are discussed, and some examples using highly collimated X-ray beam are shown.
日本結晶成長学会の論文
1977-06-25