一方向凝固過程における不純物原子の混入過程モンテカルロ・シミュレーション(<小特集>バルク成長分科会特集 : 結晶の完全性を目指して)

概要

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Monte Carlo simulation of the unidirectional melt growth is performed to study the solidification process and the taking-in process of impurities at the solid-melt interface. It simulates the Czochralski Silicon growth by using the diamond lattice. The equilibrium and effective distribution coefficients can be evaluated by the simulation. The nucleation of impurity occurs in the melt and the growth is not steady when the interaction of impurity is strong. The structure of growing solid-melt interface is also investigated. The interface of [111] growth is flat in the atomic scale. On the other hand, that of [100] growth is very rough. Then, the growth modes are different by the different crystal orientation of interface. The larger concentration of impurity causes the diffuser interface. The interaction between solid atom and impurity flattens such interface because of more impurities incorporated by the solid.
日本結晶成長学会の論文
1998-12-15