Siバルク単結晶内の8面体ボイド状欠陥

概要

論文の詳細を見る
We analyzed the structure of octahedral voids in the bulk of standard silicon wafers. They are often twin type and are about 100 nm in size.The structure of the defect is incompletely octahedron. and is mainly surrounded by{111}planes.Electron diffraction and energy-dispersive Xray spectroscopy analyses suggest that the octahedron defect is void.A 2nm-thick layer exists on each of the side walls of the void defect. Auger electron spectroscopy analysis suggests that the 2nm-thick layer is Si02.
日本結晶成長学会の論文
1997-07-01