DIAGNOSTIC USEFULNESS OF PCG, MCG, M-ECHO, RCSE AND LVG IN LEFT VENTRICULAR ANEURYSM AFTER MYOCARDIAL INFARCTION : New Techniques, Echocardiography II : PROCEEDINGS OF THE 44th ANNUAL SCIENTIFIC MEETING OF THE JAPANESE CIRCULATION SOCIETY
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概要
- 論文の詳細を見る
- 社団法人日本循環器学会の論文
- 1980-09-20
著者
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Yamashita Kenji
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Yamashita Kenji
Department Of Int. Med. Kushu Kosei-nenkin Hospital
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Nishimoto shoji
Department of Medicine and Pathology
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SHIOTANI Kunihiko
Depart. of Int. Med., Kyushu Kosei-Nenkin Hospital
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TORII Schinichiro
Depart. of Int. Med., Kyushu Kosei-Nenkin Hospital
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SUGIHARA Masayoshi
Depart. of Int. Med., Kyushu Kosei-Nenkin Hospital
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SAGARA Tomohiko
Division of Gerontol. Kyushu Kosei-Nenkin Hospital
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SAGARA Tomohiko
Department of Medicine,Laboratory,Cardiology and Radiology,Kyushu Kosei-Nenkin Hospital
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Torii Schinichiro
Depart. Of Int. Med. Kyushu Kosei-nenkin Hospital
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Nishimoto Shoji
Depart. Of Int. Med. Kyushu Kosei-nenkin Hospital
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SAGARA TOMOHIKO
KYUSHU WELFARE PENSION HOSPITAL INTERNAL MEDICINE
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TORII Schinichiro
Division of Cardiology. Kushu Kosei-Nenkin Hospital
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Shiotani Kunihiko
Depart. Of Int. Med. Kyushu Kosei-nenkin Hospital
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Sugihara Masayoshi
Depart. Of Int. Med. Kyushu Kosei-nenkin Hospital
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Yamashita Kenji
Department Of Bioscience And Biotechnology Fuculty Of Engineering Okayama University
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SAGARA Tomohiko
Department of Internal Medicine, Kyushu Kohsei-Nenkin Hospital
関連論文
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- Optimization Process in the P-Type Activation and Its Relationship with the Defects Structure in Mg-Doped p-GaN
- Lateral Overgrowth of Thick GaN on Patterned GaN Substrate by Sublimation Technique
- Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
- Surface Pretreatment of Bulk GaN for Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
- Trabecular Pattern Analysis Using Fractal Dimension
- Measure Scientific Analysis of Bone Radiographs
- Reactive Ion Etching of GaN and Al_xGa_N Using Cl_2/CH_4/Ar Plasma
- Selective Etching of GaN over Al_xGa_N Using Reactive Ion Plasma of Cl_2/CH_4/Ar Gas Mixture
- High Temperature Reactive Ion Etching of GaN and AlGaN Using Cl_2 and CH_4 Plasma
- Spin polarization of exciton luminescence from ordered Ga0.5In0.5P
- The X-Ray Structure of the Supernova Remnant 3C 400.2
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- Carrier Mobilities in a Regioregular Poly(3-octylthiophene)Film at Various Oxidation Stages
- Fabrication of an Organic p-n Homojunction Diode Using Electrochemically Cation- and Photochemically Anion-Doped Polymer
- Development and Surface Evaluation of Large SiC X-Ray Mirrors for High-Brilliance Synchrotron Radiation
- Carrier-Relaxation Process in Time-Resolved Up-Converted Photoluminescence at Ordered (Al_Ga_)_In_P and GaAs Heterointerface
- Higher-interband electroreflectance of long-range ordered Ga0.5In0.5P
- Photoluminescence from metastable states in long-range ordered (Al0.5Ga0.5)0.51In0.49P
- Inelastic phonon scattering in long-range-ordered (Al0.5Ga0.5)0.5In0.5P
- Direct optical transitions in indirect-gap (Al0.5Ga0.5)0.51In0.49P by atomic ordering
- Does an X-Ray Photon Really Generate a Charge Cloud with an Asymmetric Shape?
- How Big Are Charge Clouds inside the Charge-Coupled Device Produced by X-Ray Photons?
- Proposal of Integrated Light Emitting Device Array with Shift Register
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- Self-Scanning Light-Emitting Device (SLED) Using pnpn Thyristor Structure
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