A Comparative Study of Thermal Conditions at Onset of Plastic Flow in Various Semiconductors
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概要
- 論文の詳細を見る
The required thermal conditions for control of thermal stresses during the melt growth of Si, GaAs, InP and CdTe are compared. The results indicate that the low thermal conductivity and CRSS values of the compound semiconductors results in significantly lower values of admissible heat transfer rates in these materials when compared to Si.
- 一般社団法人日本機械学会の論文
- 1991-02-15
著者
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Ozoe Hiroyuki
Institute Of Advanced Material Study Kyushu University
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Ozoe Hiroyuki
Institute For Materials Chemistry And Engineering Kyushu University
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MOTAKEF Shahryar
Department of Mechanical Engineering Massachusetts Institute of Technology
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