下面加熱の水平長方形管内複合対流中のベナード渦の生成制御に関する研究

概要

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Thermal CVD reactors of a horizontal rectangular duct are widely used in the production of semiconductor layers, but in the process strong vortexes having axes in the flow direction prevent uniform growth of the layer. This research aims at a fundamental study of controlling strong to provide horizontally uniform fluid temperature. Experiments reveal three typical flow patterns caused by heating the side walls. Those are: a flow of a single-pair Benard cell, and unsteady flow with time-averaged uniform temperature and a pair of vortexes with circulation opposite to that of a Benard cell. Numerical calculations assuming a laminar, steady 2-dimensional flow were made by a SOR method. Experimental and predicted results were compared and indicated agreement in strong vortex cases, but little agreement otherwise.
一般社団法人日本機械学会の論文
1989-03-25