LP-CVDシリコンウェーハプロセスの表面反応と吸着粒子の挙動に関するMD解析〔流体工学, 流体機械〕

概要

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By using the molecular dynamics method (MD) and computer graphics (CG), the surface processing mechanism of SiH_2→Si+2H in LP-CVD Silicon wafer fabrication is analyzed, in which we introduce a chemical reaction model consisting of the activating energy and attack angle between SiH_2 gaseous molecules and Si atoms monocrystalline. The atom surface adsorption and inelastic collision are discussed considering energy exchange between the particles and surface. Moreover, the potential state and behavior of hydrogen atom adsorbed as a free particle are also calculated and discussed. The relevant potential surface of H free particle in the Si crystal lattice is found to be useful to understand its potential state and behavior.
一般社団法人日本機械学会の論文
1998-04-25