ワイドギャップ半導体LnCuOCh(Ln=ランタノイド,Ch=カルコゲン)の低次元構造とオプトエレクトロニクス機能:総説(<特集>イノベーティブセラミックス(I))

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This article reviews novel electrical and optical properties found for epitaxial thin films of wide-gap semiconductors, LnCuQCh (Ln = lanthanide, Ch = chalcogen). This material series has a two-dimensional crystal structure composed of alternately stacked (Ln_2O_2)^<2+> and (Cu_2Ch_2)^<2-> layers. Distinctive properties such as high hole mobility, degenerate p-type conduction, room temperature exciton, and large optical nonlinearity were found and these are attributed to two-dimensional electronic structure arising from the layered structure, i.e., a narrow gaped and hole-conductive (Cu_2Ch_2)^<2-> layer is sandwiched by wide-gaped insulating (Ln_2O_2)2+ layers. In particular, the wide-gap p-type metallic conduction was the first demonstration among any class of wide-gap materials including GaN: Mg. Realization of epitaxial thin films for these materials by reactive solid-phase epitaxy led to these discoveries which make LnCuOCh promising materials for optoelectronic devices utilizing the high p-type conductivity and/or the room temperature exciton.
社団法人日本セラミックス協会の論文
2005-01-01