レーザーラマン分光法による窒化ケイ素焼結体中の遊離ケイ素定量法

概要

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The method for determining free silicon in sintered Si_3N_4 by laser Raman spectrometry has been studied. In this study, it was found that the amount of free silicon can be determined from the Raman peak intensity ratio I.521 cm^<-1>/I.206 cm^<-1>, in which the peak of 521 cm^<-1> is assigned to free silicon and that of 206 cm^<-1>, to skeleton vibration of β-Si_3N_4. The results obtained by using this method are as follows : (1) The increase in sintering temperature and time tends to increase the amount of free silicon. (2) The variation of free silicon content at the surface part from place to place is greater than that at the inside part. This method makes it possible to measure the amount of free silicon in β-Si_3N_4 easily, and possibly gives instructive information such as the condition for avoiding precipitation of free silicon.
社団法人日本セラミックス協会の論文
1989-12-01