活性金属を用いた窒化ケイ素と金属との接合界面の解析

概要

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Surface analysis of the joining interface between silicon nitride (Si_3N_4) and metal with an active metal foil was carried out by XPS, SEM-EDX to make clear joining mechanism and action of brazing metals. The reaction product layer of the specimen which contained brazing metal was constituted two layers, and was about 5 μm thick. Layer I facing Si_3N_4 was composed of titanium nitride (TiN) , and layer II facing brazing metals was composed of TiN and titanium silicide ( Ti_5Si_3). The reaction product layer of a specimen without brazing metal was about 0.4 μm thick and composed of TiN, Ti_5Si_3 and elemental silicon(Si) . On the basis of the data obtained by this analysis, it was considered that ; (a) During the initial stage of joining, Si_3N_4 reacts with titanium at the interface to produce TiN and Si according to reaction (1). Si_3N_4+4Ti→4TiN+3Si (1) (b) At a system contained brazing metals, diffusion of Si into the inside was accelerated to react with non-reacted Ti and from Ti_5Si_3 according to reaction (2) 3Si+5Ti→Ti_5Si_3 (2) (c) Action of brazing metals accelerates the diffusions of Si. TiN, Ti_5Si_3 and Ti, and products wide reaction layer.
社団法人日本セラミックス協会の論文
1989-11-01