スズを充填したスクッテルダイト型Sn_xCo_4Sb_<12>の合成と熱電特性

概要

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Tin atoms were inserted into the skutterudite-type CoSb_3 host lattice under high pressure and temperature conditions. It was found that Sn atoms could be inserted into the body-centered vacant site, resulting in the formation of new filled (or partially filled) skutterudites, Sn_xCo_4Sb_<12>. The degree of insertion (x) increases with increasing applied pressure, and the vacant sites of the CoSb_3 host lattice is fully occupied by Sn atoms when the reaction is carried out at 8 GPa and at 550℃. X-ray Rietveld refinement revealed that the inserted Sn atom showed an anomalously large isotropic atomic displacement parameter, indicating a large thermal vibration amplitude at the body-centered position. The Sn-filled skutterudites exhibit n-type semiconducting behaviour indicating that Sn filling causes the formation of a donor level.
社団法人日本セラミックス協会の論文
2000-06-01