炭化ケイ素セラミックス表面のチタン蒸気メタライジング

概要

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Silicon-carbide ceramic was metallized with titanium by the vapor-diffusion method, where pure titanium powder was used as a vapor source at temperatures between 973 and 1323 K for up to 296.1 ks in a dynamic vacuum atmosphere. The structure and composition of the metallized layers were investigated by scanning electron microscopy, electron-probe microanalysis, and X-ray diffraction analysis. At the initial stage of the metallization, titanium vapor reacted preferentially with the so called free carbon in the grain boundaries of SiC ceramics to form a titanium carbide, and then a metallized layer was grown laterally, forming the sub-layer structures. This sub-layer structure was composed of five sub-layers; TiC (top surface), Ti_5Si_3 containing TiC (outer layer), TiC containing Ti_5Si_3 (middle layer), Ti_5Si_3 (inner layer) and Ti_3SiC_2 (bottom layer). Growth kinetics of each sub-layer and their total thicknesses obeyed the parabolic rate law, and the parabolic rate constants (kp) for the total layer varied between 10^<-16>m^2・s^<-1> at 1173 K and 10^<-15>m^2・s^<-1> at 1323 K. The activation energy (Q_<kp>) obtained for the metallized layer was 153 kJ・mol^<-1>.
社団法人日本セラミックス協会の論文
1997-01-01