フラックス法による新物質A_x[Ga_8Ga_<8+x>Ti<16-x>O_<56>](A=K,Rb,Cs)単結晶の育成

概要

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Single crystals of alkali-metal gallotitanogallate (AGGTO); A_x[Ga_8Ga_<8+x>Ti_<l6-x>O_<56>](A=K,Rb,Cs) with a new type of one-dimensional tunnel structure were grown by the flux method. The best grown AGGTO crystals were obtained by slow-cooling a flux melt at 1300℃ using a mixture of 20 mol% crystal composition of (A_2O)_1(TiO_2)_1(Ga_2O_3)_1 and 80 mol% flux composition of (A2_O)_1(M_OO3)_<1.5>. The grown crystals were fibrous form elongating the c-axis (or tunnel axis) with a length of 5-10 mm and a diameter of 10-100μm. The crystal structure and its material design are described on the basis of combination of structure waits of priderite and β-gallia. The characteristic IR spectra were observed as the two absorption bands of 400 cm^<-1> and 475 cm^<-1>, and the former was assigned to a Ga(Ti)-O stretching mode and the latter to a Ga (Ti)-O-Ga(Ti) bending mode in (Ga, Ti)O_6 octahedra and GaO_4 tetrahedra.
社団法人日本セラミックス協会の論文
1990-11-01