ゾル-ゲル法により作製したTi_<1-X>V_xO_2薄膜電極の光電気化学的挙動

概要

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The origin of the photoresponse in the visible region observed for the sol-gel derived Ti_<1-X>V_xO_<2> thin films has been studied in relation to the doping level, χ, which is ranging from 0.03 to 0.12. Effects of the postheating atmosphere and the substrate nature on the crystallization behavior and photoelectrochemical properties of the films were examined. X-ray diffraction analysis revealed that thin films with χ≤0.06 consisted only of anatase type TiO_<2> phase regardless of the post-heating atmosphere and substrate nature, whereas for the samples with χ≥0.07, VO_<2> or V_<2>O_<5> phases have been detected in addition to anatase phase depending on the post-heating atmosphere. Differences in photoelectrochemical characteristics between the thin film electrodes with χ≤0.06 and χ≥0.07 and the origin of the visible photoresponse are discussed on the basis of the difference in crystallization bahavior of the Ti_<1-x>V_xO_2 electrodes.
社団法人日本セラミックス協会の論文
2001-08-01