Stress-Induced Phase Change of Single-Crystalline GaSb, InAs, and Ge
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概要
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Uniaxial pressure precipitates metallic transition of GaSb and Inks. The lowesttransition pressures obtained were 55-58 kbar (GaSb) and 63-67 kbar (Inks) incontrast to 65 -75 kbar (GaSb) and 85-90 kbar ([nAs), values reported so far.In the case of GaSb, uniaxial stress applied on (100) was the most inefficient toprecipitate the transition, suggesting the same mechanism prevailing at the transi-lion as in InSb. Although similar phenomenon was observed for Ge, quasi-hydrostatic pressure was more effective in precipitating the transition.
- 社団法人日本物理学会の論文
- 1978-12-15
著者
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Okai Bin
National Institute For Research In Inorganic Materials
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Yoshimoto Jiichiro
National Institute For Researches In Inorgamic Materials
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