Mean Free Path for Plasmon Excitation in Aluminum in the Energy Region from 1.5 to 10.9 keV
スポンサーリンク
概要
- 論文の詳細を見る
The mean free paths for plasmon excitation were measured through the obser-vation of the energy loss spectrum of the electrons which passed through a thinaluminum film. In order to obtain accurate values the following problems of a thinfilm were discussed in detail ; the thickness determination, the evaluation ofthe microscopic thickness variation in a film and the estimation of the effect ofthe surface contamination and the oxidation. The influence of the angular disper-sion of the electrons due to plasmon excitation was found to be very serious.The agreement of the observed value with the Quinn's theory was considerablygood in the energy region from 5 to 10.9 keV and in the lower region the observedpaths were found to be longer.
- 社団法人日本物理学会の論文
- 1978-04-15
著者
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MORI Chizuo
Department of Electricity, Aichi Institute of Technology
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Mori Chizuo
Department Of Nuclear Engineering Faculty Of Engineering Nagoya University
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WATANABE Tamaki
Department of Nuclear Engineering, Faculty of Engineering, Nogoya University
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ISHIGURE Nobuhito
Department of Nuclear Engineering,Faculty of Engineering,Nagoya University
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Watanabe Tamaki
Department Of Nuclear Engineering Faculty Of Engineering Nagoya University
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Ishigure Nobuhito
Department Of Nuclear Engineering Faculty Of Engineering Nagoya University
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Ishigure Nobuhito
Department Of Health Sciences School Of Medicine Nagoya University
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Mori Chizuo
Department Of Electricity Aichi Institute Of Technology
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Mori Chizuo
Department of Nuclear Engineering,Faculty of Engineering,Nagoya University
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