Note on the Field Dependence of the Mobility in Semiconductors
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概要
- 論文の詳細を見る
By assuming that the mobility, μ can be expanded in powers of the field strength F as μ = μ_0(1-v_<F>^2), v is calculated for non-polar and polar semiconductors. The electron-electron interactions are neglected completely and the Boltzmann equation is solved by means of the variation method. It is shown that v calculated in this way differs significantly from that calculated in the previous paper and in Stratton's particularly at low temperatures. The electric field dependence of the Hall coefficient is also estimated.
- 社団法人日本物理学会の論文
- 1960-07-05
著者
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Hattori Masumi
Department Of Physics University Of Nagoya
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Hattori Masumi
Department Of Applied Physics Nagoya University
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Sato Hisanao
Research Department Wireless Division Matsushita Electric Industrial Co. Ltd.
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