Phonon-Drag Thermoelectric Effect in Piezoelectric Semiconductors
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概要
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The classical treatment of the electron-acoustic wave interaction in piezoelectric semiconductors is extended to acount for the phonon.-drag contribution to the thermoelectric effect, since the long wavelength phonons may play a dominant role in this interaction and also the relaxation times of these phonons are very long. The phonon-drag part of the thermoelectric power, Q_p, is found to be sensitive to the Debye length 1/q_D which is a measure of the screening effect of the interaction. It is shown that for (v_s/2Dq_D)^2≫1 Q_p is proportional to T^<-4>, and that it is multiplied by a factor (v_s/2Dq_D) when (v_s/2Dq_D)^2≫1; where v_s is the sound velocity and D is the electron diffusion constant.
- 社団法人日本物理学会の論文
- 1965-07-05
著者
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SATO Hisanao
Research Laboratory, Wireless Division, Matsushita Electric Industrial Company
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Sato Hisanao
Research Laboratory Wireless Division Matsushita Electric Industrial Company
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Sato Hisanao
Research Department Wireless Division Matsushita Electric Industrial Co. Ltd.
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