Effects of Impurity-Vacancy Complex on the Degree of Compensation in Compoound Semicoonductors

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概要

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• The degree of self-compensation in heavily doped binary semiconductors is calculated by assuming the existence of both doubly ionizable vacanncies and impurity-vacancy complexes. It is found that the compensation by the complexes results in limitaion in the concentration of effective donors. A tentative explanation is propcsed for the observed limit in n-type cooductivity in ZnTe.

• 社団法人日本物理学会の論文
• 1966-08-05

著者

• Sato Hisanao

  Research Department Wireless Division Matsushita Electric Industrial Co. Ltd.

• Sato Hisanao

  Research Laboratory Wireless Division Matsushita Electric Industrial Co. Ltd

• Sato H.

  Research Laboratory, Wireless Division, Matsushita Electric Industrial Co., Ltd

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• Hall Effect in p-Type Germanium at High Electric Field
• Note on the Field Dependence of the Mobility in Semiconductors
• Effects of Impurity-Vacancy Complex on the Degree of Compensation in Compoound Semicoonductors
• Phonon-Drag Thermoelectric Effect in Piezoelectric Semiconductors
• Effects of Phonon Distributions on Hot Electrons in Semiconductors

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