Effects of Phonon Distributions on Hot Electrons in Semiconductors

概要

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At liquid helium temperature, electrons in germanium are easily heated with electric fields and hence excited from donor states in the conduction band. Under the condition of complete ionization of donors, the distribution function for phonons is investigated and the current density is calculated by assuming temperature and constant drift velocity for electrons and phonons, respectively. It is shown that the drift of phonons has no appreciable effect on electric current, but that the phonon temperature determind as a function of field strengths affects considerably the magnitude of the current density. The current density, j, calculated is proportional to F^<1/5> where F is the field strength, provided that phonons are in equilibrium with the heat bath. If phonon temperature is increased by electric fields and becomes nearly equal to electron temperature, j is proportional to F ^<5/11>. Conditions for these cases are discussed.
一般社団法人日本物理学会の論文
1963-01-05